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    • Aln film deposition as a semiconductor device 

      Caicedo, Julio Cesar; Pérez Taborda, Jaime Andrés; Chaparro, Willian Aperador
      AlN films were deposited by pulsed laser deposition (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the cathode was an aluminium high purity (99.99%) target. ...
      Universidad Nacional de Colombia Revistas electrónicas UN Ingeniería e Investigación.