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    • Gaas/algaas nanoheterostructures: simulation and application on high mobility transistors 

      Rodríguez, Eduardo Martín; González R., Estrella
      This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron ...
      Universidad Nacional de Colombia Revistas electrónicas UN Ingeniería e Investigación.