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Modelamiento de la formación de microcavidades en silicio poroso (SP): densidad y distribución de poros

dc.rights.licenseAtribución-SinDerivadas 4.0 Internacional
dc.rights.licenseAtribución-SinDerivadas 4.0 Internacional
dc.contributor.advisorDussán Cuenca, Anderson
dc.contributor.authorVinchira Morato, Manuel Darío
dc.date.accessioned2020-08-14T20:43:47Z
dc.date.available2020-08-14T20:43:47Z
dc.date.issued2020-06-19
dc.identifier.urihttps://repositorio.unal.edu.co/handle/unal/78046
dc.description.abstractEn el presente trabajo se fabricaron muestras de silicio poroso (SP) sobre sustratos de c-Si tipo-p con orientación <100> y <111> y resistividad eléctrica de 1 − 5mΩ cm, a partir de la variación de los parámetros de síntesis como: la concentración del electrolito de [HF:DMF], la densidad de corriente y tiempo de anodización. Se obtuvieron los parámetros óptimos para tener muestras de SP reproducibles y uniformes. Se encontró una morfología final dependiente de los parámetros de anodización y las condiciones de pretratamiento. Se realizaron las mediciones características de la morfología de los poros formados por medio de la aplicación de software ImageJ, dando lugar a estructuras con dimensiones de mesoporos y macroporos. Adicionalmente, se estudió la distribución de poros y se determinó la densidad de poros formados como función de los parámetros de síntesis. Posteriormente, se construyó un algoritmo en C++ modelando el perfil de crecimiento de los poros por el método de simulación de autómatas celulares (AC) basado en los caminos de reacción propuestos por Memming y Schwant para formación de SP. Se contrastaron los resultados experimentales con el perfil resultante de simulación para determinar la validez del modelo.
dc.description.abstractIn the present work samples of porous silicon (SP) were manufactured on substrates of c-Si type-p with orientation <100> and <111> and electrical resistivity of 1 − 5mΩ-cm, from the variation of the synthesis parameters such as: [HF: DMF] electrolyte concentration, current density and anodizing time. The optimal parameters were obtained to have reproducible and uniform SP samples. A final morphology was found depending on the anodizing parameters and pretreatment conditions. The characteristic measurements of the morphology of the pores formed by means of the application of ImageJ software were carried out, giving rise to structures with mesopore and macropore dimensions. Additionally, the pore distribution was studied and the density of pores formed as a function of the synthesis parameters was determined. Subsequently, a C ++ algorithm was constructed by modeling the growth profile of the pores by the simulation method of cellular automata (CA) based on the reaction paths proposed by Memming and Schwant for SP formation. The experimental results were contrasted with the resulting simulation profile to determine the validity of the model.
dc.format.extent97
dc.format.mimetypeapplication/pdf
dc.language.isospa
dc.rights.urihttp://creativecommons.org/licenses/by-nd/4.0/
dc.subject.ddc530 - Física
dc.subject.ddc540 - Química y ciencias afines
dc.subject.ddc005 - Programación, programas, datos de computación
dc.titleModelamiento de la formación de microcavidades en silicio poroso (SP): densidad y distribución de poros
dc.typeOtro
dc.rights.spaAcceso abierto
dc.type.driverinfo:eu-repo/semantics/other
dc.type.versioninfo:eu-repo/semantics/acceptedVersion
dc.publisher.programBogotá - Ciencias - Maestría en Ciencias - Física
dc.contributor.researchgroupMateriales Nanoestructurados y sus Aplicaciones
dc.description.degreelevelMaestría
dc.publisher.departmentDepartamento de Física
dc.publisher.branchUniversidad Nacional de Colombia - Sede Bogotá
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dc.rights.accessrightsinfo:eu-repo/semantics/openAccess
dc.subject.proposalsilicio poroso
dc.subject.proposalporous silicon
dc.subject.proposalmodeling
dc.subject.proposalmodelamiento
dc.subject.proposalautomatas celulares
dc.subject.proposalcellular automata
dc.subject.proposalnanoestructurados
dc.subject.proposalnanostructured
dc.subject.proposalmorphology
dc.subject.proposalmorfología


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