Estudio de las propiedades físicas de sistemas multicapas basados en GaMnSb para aplicaciones en espintrónica

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dc.contributor.advisorDussán Cuenca, Anderson
dc.contributor.authorCalderón Cómbita, Jorge Arturo
dc.contributor.researchgroupMateriales Nanoestructurados y Sus Aplicacionesspa
dc.date.accessioned2022-03-24T12:20:37Z
dc.date.available2022-03-24T12:20:37Z
dc.date.issued2021
dc.descriptionilustraciones, graficasspa
dc.description.abstractEn este trabajo se fabricaron muestras de películas delgadas de GaSb y sistemas multicapas de [GaSb/Mn]_n por medio de la técnica de pulverización catódica asistida por Campo Magnético de corriente directa (“DC magnetron Sputtering”), para valores de n=1,3,6 y 12. Utilizando XRD, FTIR y Raman se estableció la presencia de fases de GaSb, Mn2Sb2, para las muestras depositadas a temperatura ambiente (300 K), junto con Mn3Ga para muestras con temperatura de sustrato de 423 K. A través de medidas de SEM, HR-SEM y AFM-MFM fue posible estudiar la formación granular en la superficie de las muestras. Se estableció que la formación de granos está descrita por el modelo de Burke para crecimiento anormal y no se tiene una correlación de la formación de dominios magnéticos en la superficie. Además, la constitución de las multicapas sigue el crecimiento columnar denso dado por el modelo MD. A partir de medidas espectroscopia de electrones Auger-Meitner y RBS fue posible estudiar los procesos de auto-difusión (D_Ga≈D_Sb~5,03×10^(-17) cm^2/s) y se propuso una solución para la segunda ley de Fick para sistemas multicapas obteniendo coeficientes de difusión de D_Mn~6,50×10^(-15) cm^2/s. Adicionalmente, el comportamiento magnético de las muestras fue estudiado utilizando un magnetrómetro SQUID y se evidenció la manifestación del fenómeno de sesgo de intercambio (“Exchange Bias”) correlacionado con la contribución ferromagnética de las fases Mn2Sb2, Mn3Ga y la contribución del comportamiento tipo ferromagnético del diluido GaSb:Mn, todas presentes en las regiones de interfaz para las muestras multicapas y la contribución antiferromagnética del Mn a 5 K; junto con la generación de histéresis a temperatura ambiente para sistemas de n=3 y n=6. A partir de medidas de I-V fue posible establecer la conmutación resistiva de las muestras, la cual se ve alterada bajo la presencia de un campo magnético externo, cuyo comportamiento fue explicado basándose en la conjunción de dos mecanismos de conducción dados por la presencia de regiones espaciales de carga y la formación de hilos de conducción manifestando su potencial uso como memorias M-RRAM. (Texto tomado de la fuente)spa
dc.description.abstractIn this work, thin film samples of GaSb and multilayer systems of [GaSb/Mn]_n were manufactured by DC magnetron Sputtering, for values of n = 1, 3, 6 and 12. Using XRD, FTIR and Raman, the presence of GaSb phases, Mn2Sb2, was established for the samples deposited at room temperature (300 K), together with Mn3Ga for samples with a substrate temperature of 423 K. SEM, HR-SEM and AFM-MFM measurements allowed to study the granular formation on the surface of the samples. The grain formation was described by the abnormal growth using the Burke model, and the magnetic responses is not correlated with the grains on the surface. Furthermore, the constitution of the multilayers follows the dense columnar growth given by MD model. From Auger-Meitner electron spectroscopy and RBS measurements it was possible to study the self-diffusion processes (D_Ga≈D_Sb~5,03×10^(-17) cm^2/s) and a solution was proposed for the second Fick's law for multilayer systems obtaining diffusion coefficients of D_Mn~6,50×10^(-15) cm^2/s. Additionally, the magnetic behavior of the samples was studied using a SQUID magnetrometer, and the Exchange Bias phenomenon was correlated with the ferromagnetic contribution of the Mn2Sb2, Mn3Ga phases and the contribution of the ferromagnetic-type behavior of the diluted GaSb: Mn, all present in the interface regions for the multilayer samples and the antiferromagnetic contribution of Mn at 5 K; together with the generation of hysteresis at room temperature for systems of n = 3 and n = 6. From I-V curves, it was possible to establish the resistive switching of the samples, which is altered under the presence of an external magnetic field, whose behavior was explained based on the conjunction of two conduction mechanisms given by the presence of spatial regions and the formation of conduction wires manifesting their potential use as M-RRAM memories.eng
dc.description.degreelevelDoctoradospa
dc.description.degreenameDoctor en Ciencias - Físicaspa
dc.description.funderBecas de Doctorados Nacionales convocatoria 785 de 2017spa
dc.description.methodsEste trabajo corresponde a una investigación experimental.spa
dc.description.researchareaFabricación de Dispositivos Nanoestructurados con Aplicaciones Tecnológicasspa
dc.format.extentxx, 234 páginasspa
dc.format.mimetypeapplication/pdfspa
dc.identifier.instnameUniversidad Nacional de Colombiaspa
dc.identifier.reponameRepositorio Institucional Universidad Nacional de Colombiaspa
dc.identifier.repourlhttps://repositorio.unal.edu.co/spa
dc.identifier.urihttps://repositorio.unal.edu.co/handle/unal/81348
dc.language.isospaspa
dc.publisherUniversidad Nacional de Colombiaspa
dc.publisher.branchUniversidad Nacional de Colombia - Sede Bogotáspa
dc.publisher.departmentDepartamento de Físicaspa
dc.publisher.facultyFacultad de Cienciasspa
dc.publisher.placeBogotá, Colombiaspa
dc.publisher.programBogotá - Ciencias - Doctorado en Ciencias - Físicaspa
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dc.rights.accessrightsinfo:eu-repo/semantics/openAccessspa
dc.rights.licenseAtribución-CompartirIgual 4.0 Internacionalspa
dc.rights.urihttp://creativecommons.org/licenses/by-sa/4.0/spa
dc.subject.ddc530 - Física::537 - Electricidad y electrónicaspa
dc.subject.ddc530 - Física::538 - Magnetismospa
dc.subject.ddc530 - Física::539 - Física modernaspa
dc.subject.lembESPINTRONICAspa
dc.subject.lembSpintronicseng
dc.subject.proposalDC Magnetron Sputteringeng
dc.subject.proposalArquitecturas Multicapaspa
dc.subject.proposalPulverización Catódica asistida por campo magnético de corriente continuaspa
dc.subject.proposalGaMnSbeng
dc.subject.proposalGaMnSbspa
dc.subject.proposalM-RRAMeng
dc.subject.proposalMM-RAAspa
dc.subject.proposalMultilayer Architectureseng
dc.subject.proposalDMSeng
dc.subject.proposalSesgo de Intercambiospa
dc.subject.proposalExchange Biaseng
dc.subject.proposalSMDspa
dc.subject.proposalConmutación Resistivaspa
dc.subject.proposalResistive Commutationeng
dc.titleEstudio de las propiedades físicas de sistemas multicapas basados en GaMnSb para aplicaciones en espintrónicaspa
dc.title.translatedStudy of the physical properties of multilayer systems based on GaMnSb for applications in spintronicseng
dc.typeTrabajo de grado - Doctoradospa
dc.type.coarhttp://purl.org/coar/resource_type/c_db06spa
dc.type.coarversionhttp://purl.org/coar/version/c_ab4af688f83e57aaspa
dc.type.contentTextspa
dc.type.driverinfo:eu-repo/semantics/doctoralThesisspa
dc.type.redcolhttp://purl.org/redcol/resource_type/TDspa
dc.type.versioninfo:eu-repo/semantics/acceptedVersionspa
dcterms.audience.professionaldevelopmentEstudiantesspa
dcterms.audience.professionaldevelopmentInvestigadoresspa
dcterms.audience.professionaldevelopmentMaestrosspa
oaire.accessrightshttp://purl.org/coar/access_right/c_abf2spa
oaire.fundernameUniversidad Nacional de Colombia - MinCienciasspa

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