Caracterización eléctrica y estudio de las propiedades de transporte del compuesto Cu2ZnSnSe4 para ser usado como capa absorbente en celdas solares
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Seña Gaibao, Neyder Jesús
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Trabajo de grado - Maestría
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EspañolFecha de publicación
2013
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En este trabajo presentamos un estudio de las de transporte eléctrico de películas delgadas de Cu2ZnSnSe4 (CZTSe) preparadas a través del método PVD variando en un amplio rango la temperatura del sustrato (Ts) y masa (Mx). Las medidas de conductividad y resistividad en función de la temperatura fueron realizadas entre 120 y 400K. Se evidenció que para la región de latas temperaturas (300K) los portadores son térmicamente activos con una única energía de activación que cambia con Ts y Mx. para la región de bajas temperaturas (300K), se estableció, para todas las muestras, que el mecanismo de transporte de Hopping de rango variable (VRH). Se obtuvieron los parámetros Hopping a partir del modelo difusional y la teoría de percolación
Abstract. In this work we study the electrical transport properties of Cu2ZnSnSe4 (CZTSe) thin films prepared by PVD method varying the a wide ranging parameters of deposition as substrate temperature (Ts) and mass (Mx). The conductivity measurements were varied for a range wide. Conductivity and resistivity measurements as a function of temperature were obtained between 120 and 400K. It was observed, that high temperature range above room temperature ( 300K) the carriers transport is thermally activated. With a single activation energy that changes with the variation of Ts and Mx. In the low temperature range ( 300K) variable range Hopping (VRH) was established as a predominant electronic transport mechanism for all samples, Hopping parameters were obtained by diffusion model and percolation theory.
Abstract. In this work we study the electrical transport properties of Cu2ZnSnSe4 (CZTSe) thin films prepared by PVD method varying the a wide ranging parameters of deposition as substrate temperature (Ts) and mass (Mx). The conductivity measurements were varied for a range wide. Conductivity and resistivity measurements as a function of temperature were obtained between 120 and 400K. It was observed, that high temperature range above room temperature ( 300K) the carriers transport is thermally activated. With a single activation energy that changes with the variation of Ts and Mx. In the low temperature range ( 300K) variable range Hopping (VRH) was established as a predominant electronic transport mechanism for all samples, Hopping parameters were obtained by diffusion model and percolation theory.